English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXSMLG12ARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO215AB |
|
|
5KP7.5CA-BWickmann / Littelfuse |
TVS DIODE 7.5V 12.9V P600 |
|
|
SMAJ120CA-QJ.W. Miller / Bourns |
DIO TVS VWM 120V 400W BIDIR SMA |
|
|
MLCE9.0AE3Roving Networks / Microchip Technology |
TVS DIODE 9V 15.4V CASE-1 |
|
|
M1.5KE350CARoving Networks / Microchip Technology |
TVS DIODE 300V 482V CASE-1 |
|
|
SMCJ70AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
JTX1N6121Semtech |
T MET BI 500W 43V |
|
|
MXLPLAD6.5KP28AE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.5V PLAD |
|
|
SMCJ6.0A-QJ.W. Miller / Bourns |
DIO TVS VRWM 6V 1500W UNIDIR SMC |
|
|
MXLPLAD15KP130ARoving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
|
5KP70A-HRWickmann / Littelfuse |
TVS DIODE 70V 113V P600 |
|
|
SMCJ17AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MP6KE13CAE3Roving Networks / Microchip Technology |
TVS DIODE 11.1V 18.2V T-18 |
