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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SMCJ6.0CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
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1N6109Roving Networks / Microchip Technology |
TVS DIODE 9.9V 19.11V AXIAL |
|
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MXP6KE8.2CARoving Networks / Microchip Technology |
TVS DIODE 7.02V 12.1V T-18 |
|
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MAPLAD30KP28ARoving Networks / Microchip Technology |
TVS DIODE 28V 46.4V PLAD |
|
|
MXLSMLG85CAE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
|
|
MXLPLAD30KP130CARoving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
|
MASMLG5.0CAE3Roving Networks / Microchip Technology |
TVS DIODE 5V 9.2V DO215AB |
|
|
JTXV1N6108AUSSemtech |
T MET BI 500W 12V |
|
|
MXP6KE6.8CAE3Roving Networks / Microchip Technology |
TVS DIODE 5.8V 10.5V T-18 |
|
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MXPLAD7.5KP16ARoving Networks / Microchip Technology |
TVS DIODE |
|
|
MXSMCG45AE3Roving Networks / Microchip Technology |
TVS DIODE 45V 72.7V DO215AB |
|
|
JTXV1N6153ASemtech |
T MET BI 1500W 22.8V HRV |
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MXPLAD36KP60ARoving Networks / Microchip Technology |
TVS DIODE 60V 96.8V PLAD |
