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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 40V |
| 电压 - 击穿（分钟）: | 44.4V |
| 电压 - 钳位（最大值）@ ipp: | 64.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 280A |
| 功率-峰值脉冲: | 18000W (18kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MPLAD36KP350AE3Roving Networks / Microchip Technology |
TVS DIODE 350V 564V PLAD |
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1.5CE36CA BK PBFREECentral Semiconductor |
TVS DIODE 30.8V 49.9V DO201 |
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1N6044Roving Networks / Microchip Technology |
TVS DIODE 12V 23.5V DO13 |
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P4SMA10A-QJ.W. Miller / Bourns |
DIO TVS VBR 10V 400W UNIDIR SMA |
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MSMLJ28A/TRRoving Networks / Microchip Technology |
TVS |
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MXLPLAD30KP40ARoving Networks / Microchip Technology |
TVS DIODE 40V 64.5V PLAD |
|
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MP6KE15AE3Roving Networks / Microchip Technology |
TVS DIODE 12.8V 21.2V T-18 |
|
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MSMBJSAC36E3/TRRoving Networks / Microchip Technology |
TVS |
|
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MXLPLAD6.5KP48AE3Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V PLAD |
|
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SMAJ30CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 30V 53.5V DO214AC |
|
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5KP170CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 170V 275V P600 |
|
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MXLPLAD7.5KP30CARoving Networks / Microchip Technology |
TVS DIODE |
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MAPLAD7.5KP12ARoving Networks / Microchip Technology |
TVS DIODE |
