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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMCG6045E3/TR13Microsemi |
TVS DIODE 14V 26.5V DO215AB |
|
|
SMA6L22AWickmann / Littelfuse |
TVS DIODE 22V 35.5V DO221AC |
|
|
MAPLAD36KP51CAE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
|
|
JANTXV1N6047ARoving Networks / Microchip Technology |
TVS DIODE 18V 30.6V DO13 |
|
|
SMCJ78A-QJ.W. Miller / Bourns |
DIO TVS VRWM 78V 1500W UNIDIR SM |
|
|
1.5SMC350AHM3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 1.5KW 350V DO214AB |
|
|
JAN1N6107ARoving Networks / Microchip Technology |
TVS DIODE 8.4V 15.6V AXIAL |
|
|
MXLPLAD36KP60CAE3Roving Networks / Microchip Technology |
TVS DIODE 60V 96.8V PLAD |
|
|
1N6170USSemtech |
TVS DIODE 114V 216.2V |
|
|
MXLSMCG43CARoving Networks / Microchip Technology |
TVS DIODE 43V 69.4V DO215AB |
|
|
MASMCGLCE33AE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V DO215AB |
|
|
ICT-36CRoving Networks / Microchip Technology |
TVS DIODE 36V 54.3V DO13 |
|
|
MXLUPT48Roving Networks / Microchip Technology |
TVS DIODE |
