English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 120V |
| 电压 - 击穿（分钟）: | 133V |
| 电压 - 钳位（最大值）@ ipp: | 193V |
| 电流 - 峰值脉冲 (10/1000µs): | 187A |
| 功率-峰值脉冲: | 36000W (36kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MAPLAD6.5KP22AE3Roving Networks / Microchip Technology |
TVS DIODE 22V 35.5V MINI-PLAD |
|
|
MXPLAD18KP110ARoving Networks / Microchip Technology |
TVS DIODE 110V 177V PLAD |
|
|
MAPLAD15KP130CARoving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
|
MXLPLAD36KP260CAE3Roving Networks / Microchip Technology |
TVS DIODE 260V 419V PLAD |
|
|
SM15T150CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MXUPTB8E3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MXSMLG7.5AE3Roving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V DO215AB |
|
|
MXLPLAD30KP70AE3Roving Networks / Microchip Technology |
TVS DIODE 70V 113V PLAD |
|
|
MSMCJ85CA/TRRoving Networks / Microchip Technology |
TVS |
|
|
MLCE13ARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V CASE-1 |
|
|
AOZ8310DI-02Alpha and Omega Semiconductor, Inc. |
TVS BIDIRECT 2V DFN |
|
|
MXLPLAD36KP22CAE3Roving Networks / Microchip Technology |
TVS DIODE 22V 36.4V PLAD |
|
|
MAP6KE68ARoving Networks / Microchip Technology |
TVS DIODE 58.1V 92V T-18 |
