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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 400V |
| 电压 - 击穿（分钟）: | 444V |
| 电压 - 钳位（最大值）@ ipp: | 644V |
| 电流 - 峰值脉冲 (10/1000µs): | 56A |
| 功率-峰值脉冲: | 36000W (36kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MASMCG51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V DO215AB |
|
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MALCE7.5AE3Roving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V CASE-1 |
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1N6145USSemtech |
TVS DIODE 9.9V 19V |
|
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MASMCG22CAE3Roving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO215AB |
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MXLCE15AE3Roving Networks / Microchip Technology |
TVS DIODE 15V 24.4V CASE-1 |
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MXP6KE30AE3Roving Networks / Microchip Technology |
TVS DIODE 25.6V 41.4V T-18 |
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MXLSMLG11CAE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AB |
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1N5635Roving Networks / Microchip Technology |
TVS DIODE |
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MAPLAD36KP40CAE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V PLAD |
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TLP17CAWickmann / Littelfuse |
HI-REL TVS AXL HP TLP17 BI |
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MXP6KE36CARoving Networks / Microchip Technology |
TVS DIODE 30.8V 49.9V T-18 |
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MXP6KE180CAE3Roving Networks / Microchip Technology |
TVS DIODE 154V 246V T-18 |
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MV1N8162USRoving Networks / Microchip Technology |
TVS DIODE |
