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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 15 |
| 电压 - 反向间隔（典型值）: | 13V |
| 电压 - 击穿（分钟）: | 14.4V |
| 电压 - 钳位（最大值）@ ipp: | 22.8V |
| 电流 - 峰值脉冲 (10/1000µs): | 1A (8/20µs) |
| 功率-峰值脉冲: | 500W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | 385pF @ 1MHz |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 16-DIP |
| 供应商设备包: | 16-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MX1.5KE9.1ARoving Networks / Microchip Technology |
TVS DIODE 7.78V 13.4V CASE-1 |
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MXLPLAD30KP90CARoving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
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MPLAD30KP43CA/TRRoving Networks / Microchip Technology |
TVS |
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15KPA85A-HRAWickmann / Littelfuse |
TVS DIODE 85V 137.6V P600 |
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15KPA33CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 33V 54.7V P600 |
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JAN1N6122AUSRoving Networks / Microchip Technology |
TVS DIODE 35.8V 64.6V B SQ-MELF |
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TPSMC43AHE3_B/HVishay General Semiconductor – Diodes Division |
TVS DIODE 36.8V 59.3V DO214AB |
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SMAJ64A-QJ.W. Miller / Bourns |
DIO TVS VWM 64V 400W UNIDIR SMA |
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MXSMCG33CARoving Networks / Microchip Technology |
TVS DIODE 33V 53.3V DO215AB |
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JTXV1N6128AUSSemtech |
T MET BI 500W 82V |
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MAP6KE170ARoving Networks / Microchip Technology |
TVS DIODE 145V 234V T-18 |
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MXP6KE51AE3Roving Networks / Microchip Technology |
TVS DIODE 43.6V 70.1V T-18 |
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JAN1N5632ARoving Networks / Microchip Technology |
TVS DIODE 7.78V 13.4V DO13 |
