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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 43V |
| 电压 - 击穿（分钟）: | 47.8V |
| 电压 - 钳位（最大值）@ ipp: | 69.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 519A |
| 功率-峰值脉冲: | 36000W (36kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXLP6KE47CARoving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V T-18 |
|
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15KPA130A-HRAWickmann / Littelfuse |
TVS DIODE 130V 208.3V P600 |
|
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1N6108ARoving Networks / Microchip Technology |
TVS DIODE 9.1V 16.9V AXIAL |
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SMBG110A-E3/5BVishay General Semiconductor – Diodes Division |
600W 110V 5% UNIDIR SMB TVS |
|
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MAPLAD7.5KP13CARoving Networks / Microchip Technology |
TVS DIODE |
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MAPLAD36KP130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
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MSMLJ7.0A/TRRoving Networks / Microchip Technology |
TVS |
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MXLPLAD15KP28AE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.5V PLAD |
|
|
MAPLAD18KP130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
|
MX1.5KE20ARoving Networks / Microchip Technology |
TVS DIODE 17.1V 27.7V CASE-1 |
|
|
CD214L-T30ALFJ.W. Miller / Bourns |
TVS DIODE 30V 48.4V SMC |
|
|
MASMCG14ARoving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO215AB |
|
|
1.5CE180CA BK PBFREECentral Semiconductor |
TVS DIODE 154V 246V DO201 |
