类型 | 描述 |
---|---|
系列: | - |
包裹: | Cut Tape (CT)Tape & Box (TB) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 60 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 650 mV @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 500 µA @ 60 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RS1JL RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 800MA SUBSMA |
|
BAS19 RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 200MA SOT23 |
|
ACDSV21H-GComchip Technology |
DIODE GEN PURP 250V 200MA SOD323 |
|
HS1JLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SOD123W |
|
FR152GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1.5A DO204AC |
|
BY1800-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
BAS16WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 250MA SOD323 |
|
HS2MAL M3GTSC (Taiwan Semiconductor) |
75NS, 2A, 1000V, HIGH EFFICIENT |
|
STPS4S200UFNSTMicroelectronics |
200 V, 4 A SCHOTTKY RECTIFIER |
|
V12PM12-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 12A 120V TO-277AC |
|
PDS340Q-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A POWERDI5 |
|
FFPF04S60STURochester Electronics |
RECTIFIER DIODE |
|
M1MA151KT1GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 40V 100MA SC59 |