类型 | 描述 |
---|---|
系列: | Stealth™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 8A |
电压 - 正向 (vf) (max) @ if: | 2.4 V @ 8 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 30 ns |
电流 - 反向泄漏@ vr: | 100 µA @ 600 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
供应商设备包: | TO-263AB (D²PAK) |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BAT54WT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SC70-3 |
|
HS1KAL M3GTSC (Taiwan Semiconductor) |
75NS, 1A, 800V, HIGH EFFICIENT R |
|
VS-8EVX06HM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE 600V SLIMDPAK |
|
NTE5953NTE Electronics, Inc. |
R-600PRV 15A ANODE CASE |
|
SR815HA0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 8A DO201AD |
|
SS1FN6-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
|
S12DGeneSiC Semiconductor |
DIODE GEN PURP 200V 12A DO4 |
|
SK5B5BSURGE |
5A -150V - SMB (DO-214AA) - RECT |
|
VS-3ECH01HM3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A SMC |
|
SBT250-10JSRochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
MUR190HA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 900V 1A DO204AC |
|
SS34L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 3A SUB SMA |
|
MUR30120B-BPMicro Commercial Components (MCC) |
30A/1200V FRED RECTIFIERS,TO-247 |