类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tube |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 80 V |
电流 - 平均整流 (io): | 8A |
电压 - 正向 (vf) (max) @ if: | 720 mV @ 8 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 550 µA @ 80 V |
电容@vr, f: | 500pF @ 5V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
供应商设备包: | TO-263 (D2Pak) |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
B130LAW-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 1A SOD123 |
|
MCL4148R13DComponents |
DIODE GP 75V 150MA MICROMELF |
|
S3AHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AB |
|
ES2BHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AA |
|
UFS340J/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 3A DO214AB |
|
MBR10100Rochester Electronics |
DIODE SCHOTTKY 100V 10A |
|
1N5614Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
SCS215AMCROHM Semiconductor |
DIODE SCHOTTKY 650V 12A TO220FM |
|
BYV29F-400-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC |
|
ACGRA4004-HFComchip Technology |
DIODE GEN PURP 400V 1A DO214AC |
|
1SS250(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 200V 100MA SC59 |
|
RGL41GHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
HS1MFS M3GTSC (Taiwan Semiconductor) |
75NS, 1A, 1000V, HIGH EFFICIENT |