类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 3 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 50 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 400 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-214AB, SMC |
供应商设备包: | DO-214AB |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MBR10100Rochester Electronics |
DIODE SCHOTTKY 100V 10A |
|
1N5614Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
SCS215AMCROHM Semiconductor |
DIODE SCHOTTKY 650V 12A TO220FM |
|
BYV29F-400-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC |
|
ACGRA4004-HFComchip Technology |
DIODE GEN PURP 400V 1A DO214AC |
|
1SS250(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 200V 100MA SC59 |
|
RGL41GHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
HS1MFS M3GTSC (Taiwan Semiconductor) |
75NS, 1A, 1000V, HIGH EFFICIENT |
|
V3FL45-M3/HVishay General Semiconductor – Diodes Division |
3A,45V,SMF,TRENCH SKY RECT. |
|
NTE6034NTE Electronics, Inc. |
R-400 PRV 60A CATH CASE |
|
STPS2H100UFSTMicroelectronics |
DIODE SCHOTTKY 100V 2A SMBFLAT |
|
SK25Diotec Semiconductor |
SCHOTTKY SMB 50V 2A |
|
VS-1N3890Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |