类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 500 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 3 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 50 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 500 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-214AB, SMC |
供应商设备包: | DO-214AB |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMEG10010ELR,115Rochester Electronics |
100V, 1 A LOW LEAKAGE CURRENT S |
|
CS3G-E3/IVishay General Semiconductor – Diodes Division |
DIODE GPP 400V 3.0A DO-214AB |
|
VS-6EWH06FNTRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
|
BAS21LT1GSanyo Semiconductor/ON Semiconductor |
DIODE GP 250V 200MA SOT23-3 |
|
HSM835JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 35V 8A DO214AB |
|
BAV19W-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 250MA SOD123 |
|
SD101BWS-E3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150MW 50V SOD323 |
|
BYM10-1000-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
|
SK18-LTPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 80V 1A DO214AA |
|
VS-86HFR160Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 85A DO203AB |
|
APT60D20BGRoving Networks / Microchip Technology |
DIODE GEN PURP 200V 60A TO247 |
|
FFSD0865ASanyo Semiconductor/ON Semiconductor |
650V 8A SIC SBD |
|
ESH2PCHM3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO220AA |