类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 16A |
电压 - 正向 (vf) (max) @ if: | 1.23 V @ 50 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 12 mA @ 100 V |
电容@vr, f: | - |
安装类型: | Stud Mount |
包/箱: | DO-203AA, DO-4, Stud |
供应商设备包: | DO-4 |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ESH1DHM3_A/IVishay General Semiconductor – Diodes Division |
1A 200V SM ULTRAFAST RECT SMA |
|
KYW35K4Diotec Semiconductor |
DIODE STD D12.77X6.6W 400V 35A |
|
NTE125-10NTE Electronics, Inc. |
NTE125(10/PKG) |
|
GP02-40-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 4KV 250MA DO204 |
|
CDBW120-HFComchip Technology |
DIODE SCHOTTKY 1A 20V SOD-123 |
|
SS3P5LHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A TO277A |
|
RS2AA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1.5A DO214AC |
|
SE10PJHM3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO220AA |
|
FESB8FTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
|
RF101L2STE25ROHM Semiconductor |
DIODE GEN PURP 200V 1A PMDS |
|
RSFKLHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 500MA SUBSMA |
|
STTH30RQ06DSTMicroelectronics |
DIODE GEN PURP 600V 30A TO220AC |
|
RF301BGE2STLROHM Semiconductor |
DIODE GEN PURP 200V 3A TO252GE |