类型 | 描述 |
---|---|
系列: | TMBS® |
包裹: | Tube |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 800 mV @ 10 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 100 µA @ 100 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-220-2 |
供应商设备包: | TO-220AC |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SBRD8835LT4G-VF01Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 35V 8A DPAK |
|
MUR4L20HA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 4A DO201AD |
|
NTS1545MFST3GRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 15A, |
|
1N4004-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 400V 1A DO41 |
|
SSC53L-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 5A 30V DO-214AB |
|
JAN1N649-1Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 400MA DO35 |
|
VS-10ETS12STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
|
S1D-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
RB168VYM-30FHTRROHM Semiconductor |
SCHOTTKY BARRIER DIODE |
|
SS10P4-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 10A TO277A |
|
NTS10100EMFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 10A 5DFN |
|
VS-MBRB1635TRR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 16A TO263AB |
|
MURS360S-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO214AA |