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DIODE GEN PURP 600V 1A DO219AB
IC DRAM 128MBIT PAR 66TSOP II
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| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.05 V @ 1 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 780 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
| 电容@vr, f: | 7.5pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AB |
| 供应商设备包: | DO-219AB (SMF) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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