English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/610 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 40 V |
| 电流 - 平均整流 (io): | 200mA |
| 电压 - 正向 (vf) (max) @ if: | 500 mV @ 200 mA |
| 速度: | Small Signal =< 200mA (Io), Any Speed |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 5 µA @ 40 V |
| 电容@vr, f: | 50pF @ 0V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AA |
| 供应商设备包: | DO-213AA |
| 工作温度 - 结: | -65°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
V15PM15-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY TMBS 15A 150V SMP |
|
BAT54B5000Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
RSFBL R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 500MA SUBSMA |
|
UF4007-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
ES2DV R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AA |
|
MBR5100MFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 5A 5DFN |
|
SE30AFJHM3/6AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO221AC |
|
1N4751A_NLRochester Electronics |
RECTIFIER DIODE |
|
GPP20D-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO204AC |
|
BYG23M-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A |
|
BAS19WT-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 200MA SOT323 |
|
SF21G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 2A DO204AC |
|
STPS1045BY-TRSTMicroelectronics |
DIODE SCHOTTKY 45V 10A DPAK |
