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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 80 V |
| 电流 - 平均整流 (io): | 60A |
| 电压 - 正向 (vf) (max) @ if: | 1.4 V @ 60 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 10 mA @ 80 V |
| 电容@vr, f: | - |
| 安装类型: | Stud Mount |
| 包/箱: | DO-203AA, DO-5, Stud |
| 供应商设备包: | DO-5 |
| 工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SS36-M3/57TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 60V DO-214AB |
|
V10P20-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 200V 2.4A TO277A |
|
VS-8EWF02STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A D-PAK |
|
VS-1N3883Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 6A DO203AA |
|
SBR0220LP-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 20V 200MA 2DFN |
|
VS-EPU3006-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
|
ES3GBHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AA |
|
VS-6FL60S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A DO203AA |
|
1N5407RLGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 3A AXIAL |
|
RGL41JHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |
|
RURD660S9A-F085Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 6A TO252AA |
|
SS23 M4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 2A DO214AA |
|
SF5403-TAPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 3A SOD64 |
