English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 250 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
| 电容@vr, f: | 6pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | 2-SMD, Flat Lead |
| 供应商设备包: | D-Flat |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CMDD6263 TR PBFREECentral Semiconductor |
DIODE SCHOTTKY 70V 15MA SOD323 |
|
SSB44HR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 4A DO214AA |
|
DSEI30-12AWickmann / Littelfuse |
DIODE GEN PURP 1.2KV 26A TO247AD |
|
VS-6FLR100S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 6A DO203AA |
|
NTE5986NTE Electronics, Inc. |
R-200 PRV 40A CATH CASE |
|
VS-ETH1506STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
S12JC V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 12A DO214AB |
|
VI20150SG-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 150V TO-262AA |
|
VS-8EVL06-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE 600V SLIMDPAK |
|
S1JL RUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
75HQ045Roving Networks / Microchip Technology |
SCHOTTKY DIODE |
|
BAS16-F2-0000HF |
DIODE GEN PURP 75V 200MA SOT23 |
|
VS-20MQ060NTRPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 2A DO214AC |
