类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 500 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 800 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
工作温度 - 结: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UH3DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
|
B0530WSQ-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 500MA SOD323 |
|
FR301G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO201AD |
|
GSD2004WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 240V 225MA SOD323 |
|
S1PJ-M3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO220AA |
|
VS-8ETU04STRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
|
V35DM120-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 6.3A TO263AC |
|
SFF1006G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 10A ITO220AB |
|
S15GLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1.5A SOD123W |
|
S85JGeneSiC Semiconductor |
DIODE GEN PURP 600V 85A DO5 |
|
MUR420GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 4A DO201AD |
|
1N3613Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1A AXIAL |
|
BAV21,113Nexperia |
DIODE GEN PURP 200V 250MA ALF2 |