DIODE SCHOTTKY 600V 20A TO220AC
IC DRAM 1GBIT PARALLEL 60TWBGA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Not For New Designs |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 20A |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 20 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 400 µA @ 600 V |
电容@vr, f: | 860pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-220-2 |
供应商设备包: | TO-220AC |
工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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