类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 16A |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 16 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 50 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-220-2 |
供应商设备包: | TO-220AC |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S85QRGeneSiC Semiconductor |
DIODE GEN PURP REV 1.2KV 85A DO5 |
|
FFSM1265ASanyo Semiconductor/ON Semiconductor |
650V 12A SIC SBD |
|
MURS120-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GP 200V 1A DO214AA |
|
TST10H200CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 5A TO220AB |
|
RS1KFS MWGTSC (Taiwan Semiconductor) |
DIODE |
|
BYG24D-E3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A |
|
1SS119-14-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
VS-1N3208Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 15A DO203AB |
|
1N60ANTE Electronics, Inc. |
D-GE 40PRV .005A |
|
BAW78DH6327XTSA1Rochester Electronics |
BAW78 - RECTIFIER |
|
ES3DBHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AA |
|
SA2J-M3/61TVishay General Semiconductor – Diodes Division |
DIODE GPP 2A 600V DO-214AC |
|
NTE5981NTE Electronics, Inc. |
R-50 PRV 40A ANODE CASE |