English
简体中文
RES 74.1K OHM 0.01% 1/8W 0805
DIODE AVALANCHE 200V 1.5A
PUSH IN FASTENER, .245 HOLE, .25
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Avalanche |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 1.5A |
| 电压 - 正向 (vf) (max) @ if: | 1.25 V @ 1.5 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 140 ns |
| 电流 - 反向泄漏@ vr: | 1 µA @ 200 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AC, SMA |
| 供应商设备包: | DO-214AC (SMA) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1SS119-14-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
VS-1N3208Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 15A DO203AB |
|
1N60ANTE Electronics, Inc. |
D-GE 40PRV .005A |
|
BAW78DH6327XTSA1Rochester Electronics |
BAW78 - RECTIFIER |
|
ES3DBHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AA |
|
SA2J-M3/61TVishay General Semiconductor – Diodes Division |
DIODE GPP 2A 600V DO-214AC |
|
NTE5981NTE Electronics, Inc. |
R-50 PRV 40A ANODE CASE |
|
UD1006FR-HSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 10A |
|
US1DHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
BAT54S/S501215Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
RS3BHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
|
RGL41G-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
FFSB2065BDN-F085Sanyo Semiconductor/ON Semiconductor |
SIC DIODE 650V |