CAP ALUM 2200UF 20% 10V RADIAL
DIODE GEN PURP 1.4KV 600A B-43
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1400 V |
电流 - 平均整流 (io): | 600A |
电压 - 正向 (vf) (max) @ if: | 2.97 V @ 1885 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 1.5 µs |
电流 - 反向泄漏@ vr: | 45 mA @ 1400 V |
电容@vr, f: | - |
安装类型: | Stud Mount |
包/箱: | DO-200AA, A-PUK |
供应商设备包: | B-43, Hockey PUK |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S1JLHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
PMEG100V100ELPDZNexperia |
DIODE SCHOTTKY 100V 10A CFP15 |
|
MSC050SDA070BCTRoving Networks / Microchip Technology |
SIC SBD 700 V 50 A TO-247 |
|
MBRS3100T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 3A SMC |
|
V10P45HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO277A |
|
U3D-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AB |
|
S40QGeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 40A DO5 |
|
UES706Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 20A DO4 |
|
HSM360JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 60V 3A DO214AB |
|
RGP15MNTE Electronics, Inc. |
R-1000V 1.5A FAST SW |
|
W7395ED480Wickmann / Littelfuse |
DIODE GEN PURP 2.88KV 7395A W112 |
|
AS4PDHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2.4A TO277A |
|
MBR130HWTRSMC Diode Solutions |
DIODE SCHOTTKY 30V 1A SOD123 |