English
简体中文
DIODE GEN PURP 80V 100MA UMD2
EMITTER IR 860NM 100MA T-1
SENSOR 3000PSI M10-1.0 6G 4.5V
BOX ALUM UNPAINTED 7.87"LX6.3"W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 80 V |
| 电流 - 平均整流 (io): | 100mA |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 100 mA |
| 速度: | Small Signal =< 200mA (Io), Any Speed |
| 反向恢复时间 (trr): | 4 ns |
| 电流 - 反向泄漏@ vr: | 100 nA @ 80 V |
| 电容@vr, f: | 3pF @ 0.5V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | SC-90, SOD-323F |
| 供应商设备包: | UMD2 |
| 工作温度 - 结: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HS3J R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO214AB |
|
FR303GTASMC Diode Solutions |
DIODE GPP 200V 3A DO201AD |
|
MUR480ERLGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 4A AXIAL |
|
VS-25ETS10STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
|
PMEG6020ETP/B115Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
1N5406-GComchip Technology |
DIODE GEN PURP 600V 3A DO201AD |
|
BAT18-05E6327Rochester Electronics |
PIN DIODE, 35V V(BR) |
|
BAS85-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD80 |
|
RSFGL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 500MA SUBSMA |
|
SE10PG-M3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO220AA |
|
PDS3100-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 3A POWERDI5 |
|
ESH2PD-M3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO220AA |
|
VS-2EJH02HM3/6AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO221AC |