English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 1200 V |
| 电流 - 平均整流 (io): | 60A |
| 电压 - 正向 (vf) (max) @ if: | 1.09 V @ 60 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 100 µA @ 1200 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-2 |
| 供应商设备包: | TO-247AC Modified |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MBR15200SMC Diode Solutions |
DIODE SCHOTTKY 200V TO220AC |
|
65DN06ELEMPRXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 8470A |
|
SJPD-L5VSanken Electric Co., Ltd. |
DIODE GEN PURP 500V 3A SJP |
|
1N4002GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
SF1200-TAPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 1A SOD57 |
|
1N5818-E3/53Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1A DO204AL |
|
S1KLSHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.2A SOD123 |
|
RB400DFHT146ROHM Semiconductor |
DIODE (RECTIFIER FRD) 40V-VRM 40 |
|
IDK20G120C5XTMA1IR (Infineon Technologies) |
SIC DISCRETE |
|
BAS521,135Nexperia |
DIODE GEN PURP 300V 250MA SOD523 |
|
MURS340T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 3A SMC |
|
S3ATRSMC Diode Solutions |
DIODE GEN PURP 50V 3A SMC |
|
STTH2R06SSTMicroelectronics |
DIODE GEN PURP 600V 2A SMC |
