English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFRED™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 60A |
| 电压 - 正向 (vf) (max) @ if: | 2.04 V @ 60 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 650 µA @ 600 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| 供应商设备包: | TO-268AA |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SBR8M100P5Q-13DZetex Semiconductors (Diodes Inc.) |
DIODE SBR 100V 8A POWERDI5 |
|
MUR160AHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
1N3288APowerex, Inc. |
DIODE GEN PURP 100V 100A DO205AA |
|
VS-10ETS10S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 10A D2PAK |
|
IDV30E65D2XKSA1IR (Infineon Technologies) |
DIODE GEN PURP 650V 30A TO220-2 |
|
STTH8S12DSTMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220AC |
|
NRVUS2AASanyo Semiconductor/ON Semiconductor |
DIODE GPP 1.5A SMA DO-214AC |
|
LSM845J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 45V 8A DO214AB |
|
RS3G V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AB |
|
SS23HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AA |
|
FR1M-LTPMicro Commercial Components (MCC) |
1A,1000V,FAST RECOVERY RECTIFIER |
|
BYM10-100HE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
|
LS411260Powerex, Inc. |
DIODE GP 1.2KV 600A POWRBLOK |
