类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard, Reverse Polarity |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 12A |
电压 - 正向 (vf) (max) @ if: | 1.26 V @ 38 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 12 mA @ 600 V |
电容@vr, f: | - |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-203AA, DO-4, Stud |
供应商设备包: | DO-203AA |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RS2JAL M3GTSC (Taiwan Semiconductor) |
250NS, 2A, 600V, FAST RECOVERY R |
|
ES1GR,115Rochester Electronics |
ES1GR - 400V, 1A HYPERFAST SWITC |
|
DAN217FHT146ROHM Semiconductor |
DIODE SWITCHING 80V 0.3A 3-PIN. |
|
MPG06MHE3_A/100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A MPG06 |
|
VS-300UR30AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 300A DO205AB |
|
1N5400-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
|
SE30PADHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO221BC |
|
S85JRGeneSiC Semiconductor |
DIODE GEN PURP REV 600V 85A DO5 |
|
BAS116E6327HTSA1IR (Infineon Technologies) |
DIODE GEN PURP 80V 250MA SOT23-3 |
|
SK1045D1Diotec Semiconductor |
SCHOTTKY DPAK 45V 10A |
|
SD101CWS-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 15MA SOD323 |
|
V12P8HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 80V 12A TO277A |
|
SD175SA30A.TSMC Diode Solutions |
DIODE SCHOTTKY 30V 30A DIE |