English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 1000 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 3 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 2 µs |
| 电流 - 反向泄漏@ vr: | 500 nA @ 1000 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | SQ-MELF, A |
| 供应商设备包: | D-5A |
| 工作温度 - 结: | -65°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UG2D-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO204AC |
|
RS2G-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1.5A DO214AA |
|
VS-50WQ10FNHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 5.5A DPAK |
|
UFR3020Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 30A DO4 |
|
S5D V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 5A DO214AB |
|
BYT56G-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
|
HERF1007GAHC0GTSC (Taiwan Semiconductor) |
DIODE, HIGH EFFICIENT |
|
FESF8ATHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 8A ITO220AC |
|
VS-3ECH02-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A SMC |
|
SS315A-F1-0000HF |
DIODE SCHOTTKY 150V 3A DO214AC |
|
NTE5814HCNTE Electronics, Inc. |
R-SI 400V 10AMP |
|
1N3881RGeneSiC Semiconductor |
DIODE GEN PURP REV 200V 6A DO4 |
|
HS5G R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 5A DO214AB |
