English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 950 mV @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
| 电容@vr, f: | 10pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AB |
| 供应商设备包: | Sub SMA |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S3BBHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AA |
|
RS07B-GS18Vishay General Semiconductor – Diodes Division |
DIODE GP 100V 500MA DO219AB |
|
S1MWF-7Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A SOD123F |
|
VS-71HFR60Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 70A DO203AB |
|
S4PD-M3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
|
RKD704KP#R5Rochester Electronics |
SCHOTTKY BARRIER DIODE |
|
5821SMJ/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 30V 3A DO214AB |
|
HS1BFLTSC (Taiwan Semiconductor) |
50NS 1A 100V HIGH EFFICIENT RECO |
|
1N4249NTE Electronics, Inc. |
R-SI 1000V 1A |
|
S4PJHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A TO277A |
|
1F14Rectron USA |
DIODE GEN PURP 1400V 500MA R1 |
|
FR2XSMADiotec Semiconductor |
DIODE FR SMA 1800V 2A |
|
V8PM10S-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
