English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Avalanche |
| 电压 - 直流反向 (vr) (max): | 1500 V |
| 电流 - 平均整流 (io): | 2A |
| 电压 - 正向 (vf) (max) @ if: | 1.6 V @ 3 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 20 µs |
| 电流 - 反向泄漏@ vr: | 3 µA @ 1500 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | SOD-57, Axial |
| 供应商设备包: | SOD-57 |
| 工作温度 - 结: | 140°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GL34B-E3/98Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
|
NTE6045NTE Electronics, Inc. |
R-1KV PRV 60A ANODE CASE |
|
VS-150EBU04HF4Vishay General Semiconductor – Diodes Division |
DIODE GP 400V 150A POWERTAB |
|
V3FM10-M3/HVishay General Semiconductor – Diodes Division |
3A,100V,SMF,TRENCH SKY RECT. |
|
CGRB301-GComchip Technology |
DIODE GEN PURP 50V 3A DO214AA |
|
1N5817-E3/73Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 1A DO204AL |
|
SE20AFDHM3/6AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.3A DO221AC |
|
GF1D-E3/67AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
|
S1J-Q-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
SS115LSHRVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A SOD123HE |
|
HS3K V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
|
VS-8EWS08STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |
|
RS3GB-T R5GTSC (Taiwan Semiconductor) |
150NS 3A 400V FAST RECOVERY RECT |
