English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 2200 V |
| 电流 - 平均整流 (io): | 30A |
| 电压 - 正向 (vf) (max) @ if: | 1.26 V @ 30 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 40 µA @ 2200 V |
| 电容@vr, f: | 7pF @ 700V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商设备包: | TO-263 (D2Pak-HV) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ES1AHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
|
TSSA3U45 R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 45V 3A DO214AC |
|
1F15Rectron USA |
DIODE GEN PURP 1500V 500MA R1 |
|
121NQ035-1SMC Diode Solutions |
DIODE SCHOTTKY 35V 120A PRM1-1 |
|
ES3G V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AB |
|
1N5406NTE Electronics, Inc. |
R-600 PRV 3A |
|
GP02-35-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 3.5KV 250MA DO204 |
|
10TQ035STRSMC Diode Solutions |
10A, 35V, D2PAK, SCHOTTKY RECTIF |
|
TPMR10J S1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 10A TO277A |
|
BAS40-05B5000Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
GL41Y-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 1A DO213AB |
|
LSIC2SD065C08AWickmann / Littelfuse |
SIC SCHOTTKY DIODE 650V 8A TO252 |
|
USD245CRRoving Networks / Microchip Technology |
RECTIFIER |
