类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Avalanche |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 1.25A |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 100 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 400 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | SOD-57, Axial |
供应商设备包: | SOD-57 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STPS745DSTMicroelectronics |
DIODE SCHOTTKY 45V 7.5A TO220AC |
|
MSS2P2-M3/89AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 2A MICROSMP |
|
FSV340AFSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 3A SMAF |
|
VIT5200-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 5A 200V TO-262AA |
|
C3D04060FWolfspeed - a Cree company |
DIODE SCHOTTKY 600V 4A TO220-F2 |
|
KYW35A3Diotec Semiconductor |
DIODE STD D12.77X6.6W 300V 35A |
|
SICR10650SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
|
ES1DL RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
V2P6HM3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 2A MICROSMP |
|
STTH2R06ASTMicroelectronics |
DIODE GEN PURP 600V 2A SMA |
|
FESF8CT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A ITO220AC |
|
ES1PB-M3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
|
CLLR1U-01 TR TIN/LEADCentral Semiconductor |
DIODE GEN PURP 100V 1A MELF |