English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Cut Tape (CT)Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 3 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
| 电容@vr, f: | 30pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AD, Axial |
| 供应商设备包: | DO-201AD |
| 工作温度 - 结: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
P2000B-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
JANS1N5552Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 3A AXIAL |
|
DSS10-01AWickmann / Littelfuse |
DIODE SCHOTTKY 100V 10A TO220AC |
|
DSB1A40Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 1A DO204AL |
|
1SS120-92TD-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
RGL34J-E3/83Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 500MA DO213 |
|
MUR110SHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO214AA |
|
VS-50WQ04FNTRL-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 5.5A DPAK |
|
RB160L-90TE25ROHM Semiconductor |
DIODE SCHOTTKY 90V 1A PMDS |
|
RGL34AHE3/98Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA |
|
BAS40E6327HTSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 40V 120MA SOT23-3 |
|
FFPF10F150STUSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1.5KV 10A TO220F |
|
SS215LW RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 2A SOD123W |
