类型 | 描述 |
---|---|
系列: | Gen2 |
包裹: | Tube |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 1200 V |
电流 - 平均整流 (io): | 44A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.8 V @ 15 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 100 µA @ 1200 V |
电容@vr, f: | 920pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | TO-247-3 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
LSIC2SD120C10Wickmann / Littelfuse |
DIODE SCHOTTKY 1.2KV 33A TO252 |
|
VS-16FLR60S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 16A DO203AA |
|
SE10FDHM3/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO219AB |
|
RB051MM-2YTRROHM Semiconductor |
DIODE SCHOTTKY 20V 3A PMDU |
|
DD600Diotec Semiconductor |
HV DIODE D2.5X6.5 6000V 0.02A |
|
CSHD8-200 TR13 PBFREECentral Semiconductor |
DIODE SCHOTTKY 200V 8A DPAK |
|
SBRT15U50SP5-7DZetex Semiconductors (Diodes Inc.) |
DIODE SBR 50V 15A POWERDI5 |
|
VS-ETH1506FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
|
JAN1N5614USRoving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A D5A |
|
1N5819-D1-0001 |
DIODE SCHOTTKY 40V 1A DO41 |
|
MBR3100RLGSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 3A DO201AD |
|
RS1DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
SD103AWS-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 350MA 40V SOD323 |