English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TMBS® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 540 mV @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 600 µA @ 50 V |
| 电容@vr, f: | 480pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-221BC, SMA Flat Leads Exposed Pad |
| 供应商设备包: | DO-221BC (SMPA) |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UFS540JE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 5A DO214AB |
|
C4D08120EWolfspeed - a Cree company |
DIODE SCHOTTKY 1.2KV 8A TO252-2 |
|
1N5059TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
|
MBRH20040RGeneSiC Semiconductor |
DIODE SCHOTTKY 40V 200A D-67 |
|
1N5626-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
|
ES1JAFSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 1A DO214AD |
|
VFT2080S-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 80V ITO-220AB |
|
CMR3-06 TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 600V 3A SMC |
|
ES1ALHRQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A SUB SMA |
|
VS-6EWX06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
|
S2AA M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1.5A DO214AC |
|
LL4154-GS18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 35V 300MA SOD80 |
|
FSU05D60KYOCERA Corporation |
DIODE FAST RECOVERY 600V 5A TO-2 |
