English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 1000 V |
| 电流 - 平均整流 (io): | 5A |
| 电压 - 正向 (vf) (max) @ if: | 1.15 V @ 5 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 2.5 µs |
| 电流 - 反向泄漏@ vr: | 10 µA @ 1000 V |
| 电容@vr, f: | 40pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMEG3020EJ,115Nexperia |
DIODE SCHOTTKY 30V 2A SOD323F |
|
SS32-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 20V DO-214AB |
|
1N4249GP-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
S4PJHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A TO277A |
|
NSB8JTHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
STPS1L20MSTMicroelectronics |
DIODE SCHOTTKY 20V 1A STMITE |
|
VS-307U250Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2.5KV 300A DO9 |
|
ACGRKM4005-HFComchip Technology |
DIODE GEN PURP 600V 1A SOD123F |
|
NTE5902NTE Electronics, Inc. |
R-500PRV 16A CATH CASE |
|
SK54BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 5A DO214AA |
|
PMEG40T50EPXNexperia |
DIODE SCHOTTKY 40V 5A CFP5 |
|
S1MLWHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 1A SOD123W |
|
PMEG3010EB/S500115Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
