English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 20 V |
| 电流 - 平均整流 (io): | 2A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 470 mV @ 2 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 150 µA @ 20 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | 2-XDFN |
| 供应商设备包: | 2-DSN (1.6x.80) |
| 工作温度 - 结: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SR103HA0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO204AL |
|
11DQ03TRSMC Diode Solutions |
DIODE SCHOTTKY 30V 1.1A DO41 |
|
MBRB1045-E3/81Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
|
VS-1N3767Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 900V 35A DO203AB |
|
RFUH25TB3SNZC9ROHM Semiconductor |
RFUH25TB3SNZ IS AN ULTRA LOW SWI |
|
FESF8HT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 8A ITO220AC |
|
S1.5G-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
GP2D006A065CSemiQ |
DIODE SCHOTTKY 650V 6A TO252-2 |
|
IDW30E60FKSA1Rochester Electronics |
IDW30E60 - SILICON POWER DIODE |
|
SK83C V6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 8A 30V DO-214AB |
|
UF4006 R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO204AL |
|
MUR4L40HR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO201AD |
|
BAW62,143Rochester Electronics |
RECTIFIER DIODE |
