English
简体中文
RES 330 OHM 0.25% 1/4W 1206
DIODE GEN PURP 600V 12A TO220AC
LPDDR3 6G DIE 192MX32
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 12A |
| 电压 - 正向 (vf) (max) @ if: | 2 V @ 12 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 20 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 |
| 供应商设备包: | TO-220AC |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
WNSC401200CWQWeEn Semiconductors Co., Ltd |
SILICON CARBIDE POWER DIODE |
|
NTE5823NTE Electronics, Inc. |
R-600 PRV 12A ANODE CASE |
|
VS-SD800C24LVishay General Semiconductor – Diodes Division |
DIODE GP 2.4KV 1180A DO200AB |
|
RB451UMTLROHM Semiconductor |
RB451UM IS SCHOTTKY BARRIER DIOD |
|
SS36LHRQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A SUB SMA |
|
SR320HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 3A DO201AD |
|
VS-8EWF06S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
|
HER303T/REIC Semiconductor, Inc. |
DIODE GEN PURP 200V 3A DO201AD |
|
HS3DSURGE |
3A -200V - SMC (DO-214AB) - RECT |
|
STPS340B-TRSTMicroelectronics |
DIODE SCHOTTKY 40V 3A DPAK |
|
UGB8JTDiotec Semiconductor |
DIODE SFR D2PAK 600V 8A |
|
VS-12FL10S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
|
S15GC R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 15A DO214AB |