类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Avalanche |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 2A |
电压 - 正向 (vf) (max) @ if: | 1 V @ 1 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 4 µs |
电流 - 反向泄漏@ vr: | 1 µA @ 800 V |
电容@vr, f: | 20pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | SOD-57, Axial |
供应商设备包: | SOD-57 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SS19L RUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 1A SUB SMA |
|
VS-30BQ015-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3.0A SMC |
|
SD2010S040S1R0Elco (AVX) |
DIODE SCHOTTKY 40V 1A SMA |
|
SF63G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 6A DO201AD |
|
1N4005GP-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
1N5408-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
|
ESGLWHRVGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |
|
SE70PGHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2.9A TO277A |
|
UPS140/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 1A POWERMITE |
|
AU2PD-M3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.6A TO277A |
|
CDBC360-GComchip Technology |
DIODE SCHOTTKY 60V 3A DO214AB |
|
UGF8JD C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 8A ITO220AC |
|
SBR1045SP5Q-13Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 45V 10A POWERDI 5 |