TVS DIODE 8V 13.6V DO215AA
DIODE GEN PURP 600V 1A AXIAL
SMA-RP/MCX-RP RG58 2.5M
SENSOR PIR WALL MNT 170UA WHT LE
类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/359 |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 250 ns |
电流 - 反向泄漏@ vr: | 1 µA @ 600 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | A, Axial |
供应商设备包: | - |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N4151DComponents |
DIODE GEN PURP 50V 200MA DO35 |
|
D3041N60TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 6KV 4090A |
|
RF051VA2STRROHM Semiconductor |
DIODE GEN PURP 200V 500MA TUMD2 |
|
RGL34K-E3/83Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 500MA DO213 |
|
RBQ30NS45BFHTLROHM Semiconductor |
RBQ30NS45BFH IS THE HIGH RELIABI |
|
VSSA210HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 2A DO214AC |
|
RBS2LAM40CTRROHM Semiconductor |
RBS2LAM40C IS SUPER LOW VF |
|
VS-MBRD330TRR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 30V DPAK |
|
S1AB-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 1A SMB |
|
V10P6HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 10A TO277A |
|
STPS160AFNSTMicroelectronics |
60 V, 1 A POWER SCHOTTKY RECTIFI |
|
RS2GAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1.5A DO214AC |
|
JAN1N6628USRoving Networks / Microchip Technology |
DIODE GEN PURP 660V 1.75A D5B |