类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 20 V |
电流 - 平均整流 (io): | 200A |
电压 - 正向 (vf) (max) @ if: | 650 mV @ 200 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 5 mA @ 20 V |
电容@vr, f: | - |
安装类型: | Chassis Mount |
包/箱: | D-67 |
供应商设备包: | D-67 |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMEG4010CEGWXNexperia |
DIODE SCHOTTKY 40V 1A SOD123 |
|
BYM11-200HE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
1N5306Solid State Inc. |
FED 2 MA DO35 |
|
VS-8EVH06HM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE 600V SLIMDPAK |
|
S07G-M-08Vishay General Semiconductor – Diodes Division |
DIODE GP 400V 500MA DO219AB |
|
RF505B6STLROHM Semiconductor |
DIODE GEN PURP 600V 5A CPD |
|
B320A-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 20V 3A SMA |
|
ESH2DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
|
ESH1D M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
SR10200-GComchip Technology |
DIODE SCHOTTKY 200V 10A TO220-3 |
|
MUH1PD-M3/89AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A MICROSMP |
|
SSB43L-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 4A 30V DO-214AC |
|
MBRH12020GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 120A D-67 |