English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SWITCHMODE™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 30 V |
| 电流 - 平均整流 (io): | 40A |
| 电压 - 正向 (vf) (max) @ if: | 550 mV @ 40 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 350 µA @ 30 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商设备包: | D2PAK |
| 工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S2D R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AA |
|
SS2P2LHM3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 2A DO220AA |
|
VFT3045BP-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 30A ITO220AC |
|
HER303G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO201AD |
|
RS2D M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AA |
|
V20PW10-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 20A SLIMDPAK |
|
S8JC M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 8A DO214AB |
|
BAV20TRRochester Electronics |
RECTIFIER DIODE |
|
RFUH20TF6SROHM Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM |
|
V10P8-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 80V 3.9A TO277A |
|
IDP15E60Rochester Electronics |
IDP15E60 - SILICON POWER DIODE |
|
APT75DQ100BGRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 75A TO247 |
|
SCS220AMCROHM Semiconductor |
DIODE SCHOTTKY 650V 20A TO220FM |
