English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 2A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 2 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 150 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
| 电容@vr, f: | 50pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | DO-214AA (SMB) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
V20PW10-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 20A SLIMDPAK |
|
S8JC M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 8A DO214AB |
|
BAV20TRRochester Electronics |
RECTIFIER DIODE |
|
RFUH20TF6SROHM Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM |
|
V10P8-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 80V 3.9A TO277A |
|
IDP15E60Rochester Electronics |
IDP15E60 - SILICON POWER DIODE |
|
APT75DQ100BGRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 75A TO247 |
|
SCS220AMCROHM Semiconductor |
DIODE SCHOTTKY 650V 20A TO220FM |
|
VS-12F100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 12A DO203AA |
|
VBT1080S-M3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 10A 80V TO-263AB |
|
1N1186ARRoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
RB075BM40SFHTLROHM Semiconductor |
SCHOTTKY BARRIER DIODE |
|
VS-15TQ060S-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 15A D2PAK |
