English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 100 V |
| 电流 - 平均整流 (io): | 5A |
| 电压 - 正向 (vf) (max) @ if: | 1.15 V @ 5 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 2.5 µs |
| 电流 - 反向泄漏@ vr: | 10 µA @ 100 V |
| 电容@vr, f: | 40pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SR504 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 5A DO201AD |
|
S4PKHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 4A TO277A |
|
LQA03TC600Power Integrations |
DIODE GEN PURP 600V 3A TO220AC |
|
VS-85HFR40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 85A DO203AB |
|
VS-8ETH03STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
|
CBS10S30,L3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 20V 1A CST2B |
|
VS-307URA250Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2.5KV 300A DO9 |
|
S1DB M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AA |
|
FESB16DT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A TO263AB |
|
CMSH3-100 BK PBFREECentral Semiconductor |
DIODE SCHOTTKY 100V 3A SMC |
|
VS-SD700C30LVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 3KV 700A DO200AB |
|
RMPG06G-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
|
TST30H150CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 15A TO220AB |
