类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 20 V |
电流 - 平均整流 (io): | 35mA (DC) |
电压 - 正向 (vf) (max) @ if: | 1 V @ 35 mA |
速度: | Small Signal =< 200mA (Io), Any Speed |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 100 nA @ 15 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
工作温度 - 结: | -65°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BAS16HLPQ-7BZetex Semiconductors (Diodes Inc.) |
FAST SWITCHING DIODE X1-DFN1006- |
|
ES1C-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO214AC |
|
VS-HFA16TB120SLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 16A TO263AB |
|
VS-300U30AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 300A DO205AB |
|
JAN1N6622USRoving Networks / Microchip Technology |
DIODE GEN PURP 660V 2A D5A |
|
LSIC2SD065D10AWickmann / Littelfuse |
DIODE SCHOTTKY SIC 650V 10A |
|
NRVBA120ET3G-VF01Rochester Electronics |
DIODE SCHOTTKY 20V 1A SMA |
|
EGL34C-E3/98Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 500MA DO213 |
|
BAS40L-G3-08Vishay General Semiconductor – Diodes Division |
SCHOTTKY DIODE DFN1006-2A |
|
VS-16FL20S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A DO203AA |
|
VS-2EYH01HM3/HVishay General Semiconductor – Diodes Division |
FRED PT RECTIFIER SLIMSMAW |
|
ACURN104-HFComchip Technology |
DIODE GEN PURP 800V 1A 1206 |
|
STTH1R06AFYSTMicroelectronics |
AUTOMOTIVE 600 V, 1 A SOD128FLAT |