DIODE FR DO-213AA 50V 0.5A
DIODE GEN PURP 400V 1A DO204AL
MODULE DDR4 SDRAM 16GB 260SODIMM
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 50 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 400 V |
电容@vr, f: | 17pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UF5407-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
|
RB068L-40TE25ROHM Semiconductor |
DIODE SCHOTTKY 40V 2A PMDS |
|
RF1501TF3SFHC9ROHM Semiconductor |
ROHM'S FAST RECOVERY DIODES ARE |
|
VS-40HF20Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
|
SS2PH5HM3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 2A DO220AA |
|
VS-6EWH06FN-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A TO252AA |
|
VS-18TQ040-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 18A TO220AC |
|
VS-8EWS08S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A TO252AA |
|
FFSB2065BSanyo Semiconductor/ON Semiconductor |
650V 20A SIC SBD GEN1.5 |
|
1N4148WTSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 75V 200MA SOD523F |
|
SR803 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 8A DO201AD |
|
UF4002 R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
UF1007-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A DO41 |