类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
二极管型: | - |
电压 - 直流反向 (vr) (max): | - |
电流 - 平均整流 (io): | - |
电压 - 正向 (vf) (max) @ if: | - |
速度: | - |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | - |
电容@vr, f: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-SD1053C28S30LVishay General Semiconductor – Diodes Division |
DIODE GP 2.8KV 920A DO200AB |
|
ES3KB-F1-3000HF |
DIODE GEN PURP 800V 3A DO214AA |
|
FESF16CTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 16A ITO220AC |
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CD214A-B320LRJ.W. Miller / Bourns |
DIO SBD VRRM 20V 3A SMA |
|
VS-25ETS12SLHM3Vishay General Semiconductor – Diodes Division |
DIODES - D2PAK-E3 |
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VS-ETL1506SHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
VS-E4PU6006LHN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A TO247AD |
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NRVTS12100EMFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 12A 5DFN |
|
FR40KR05GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 40A DO5 |
|
BYG10D-E3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A |
|
BYT52D-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.4A SOD57 |
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BAS116,215Nexperia |
DIODE GEN PURP 75V 215MA SOT23 |
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SS36LHRUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A SUB SMA |