English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Cut Tape (CT)Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.4 V @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 400 ns |
| 电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | Axial |
| 供应商设备包: | - |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MUR120S R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AA |
|
MBRA320T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 20V 3A SMA |
|
S1A M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO214AC |
|
NTE621NTE Electronics, Inc. |
D-400V 1AMP SURFACE MNT |
|
SS13HR3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO214AC |
|
BYM36E-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 2.9A SOD64 |
|
VS-6FL20S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 6A DO203AA |
|
1N4148WSQ-7-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 75V 250MA SOD323 |
|
1N5331Roving Networks / Microchip Technology |
DIODE GEN PURP 1.4KV 22A DO4 |
|
NTE574NTE Electronics, Inc. |
R-400V 1A 35NS TRR |
|
VSSC520S-M3/57TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 5A 200V DO-214AB |
|
SD101BW-G3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 400MW 50V SOD123 |
|
MURA215T3Rochester Electronics |
RECTIFIER DIODE |
