English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | - |
| 电流 - 平均整流 (io): | 2A |
| 电压 - 正向 (vf) (max) @ if: | 950 mV @ 2 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
| 电容@vr, f: | 30pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | DO-214AA (SMB) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4936G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
UGF12JD C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 12A ITO220AC |
|
NSR01F30NXT5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 100MA 2DSN |
|
UG8DT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
|
S1AHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
|
MR851GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 3A AXIAL |
|
VS-41HFR120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 40A DO203AB |
|
APT30DQ100KGRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 30A TO220 |
|
MBRB8H100T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 8A D2PAK |
|
AR3PMHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1KV 1.6A TO277A |
|
5822SMJ/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 3A DO214AB |
|
VIT2060G-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 10A TO262AA |
|
SE20DJHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3.9A TO263AC |
